advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 60v lower on-resistance r ds(on) 10m fast switching characteristic i d 75a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i d @t c =100 a i dm a p d @t c =25 w t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 1.1 /w rthj-a maixmum thermal resistance, junction-ambient 62 /w data and specifications subject to change without notice 200902042 1 AP9978GP rohs-compliant product -55 to 150 parameter rating drain-source voltage 60 gate-source voltage + 20 continuous drain current, v gs @ 10v 75 continuous drain current, v gs @ 10v 49 pulsed drain current 1 270 thermal data parameter storage temperature range total power dissipation 113.6 -55 to 150 operating junction temperature range g d s a dvanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. the to-220 package is widely preferred for commercial-industrial through-hole applications. g d s to-220(p)
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =40a - - 10 m ? v gs =4.5v, i d =30a - - 16 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =30a - 56 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 25 ua i gss gate-source leakage v gs = + 20v, v ds =0v - - + 100 na q g total gate charge 2 i d =30a - 33 53 nc q gs gate-source charge v ds =48v - 9.3 - nc q gd gate-drain ("miller") charge v gs =4.5v - 20 - nc t d(on) turn-on delay time 2 v ds =30v - 12 - ns t r rise time i d =30a - 50 - ns t d(off) turn-off delay time r g =3.3 , v gs =10v - 40 - ns t f fall time r d =1 -80- ns c iss input capacitance v gs =0v - 2800 4500 pf c oss output capacitance v ds =25v - 300 - pf c rss reverse transfer capacitance f=1.0mhz - 200 - pf r g gate resistance f=1.0mhz - 1.1 1.6 source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =40a, v gs =0v - - 1.3 v t rr reverse recovery time 2 i s =10a, v gs =0v - 33 - ns q rr reverse recovery charge di/dt=100a/s - 46 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 AP9978GP
AP9978GP fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 0 40 80 120 160 200 240 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0 40 80 120 160 02468 v ds , drain-to-source voltage (v) i d , drain current (a) t c = 150 o c 10v 7.0v 6.0v 5.0v v gs =4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =40a v g =10v 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.0 0.4 0.8 1.2 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) (v) 6 8 10 12 14 16 246810 v gs gate-to-source voltage (v) r ds(on) (m ) i d =30a t c =25 o c
fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 AP9978GP 0 1 2 3 4 5 6 7 8 9 10 0 102030405060 q g , total gate charge (nc) v gs , gate to source voltage (v) v ds =30v v ds =36v v ds =48v i d =30a q v g 4.5v q gs q gd q g charge 0 1000 2000 3000 4000 5000 1 5 9 13 17 21 25 29 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oxx c rss 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 1 10 100 1000 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc t d(on) t r t d(off) t f v ds v gs 10% 90%
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